دیتاشیت IS61Nx(V)P25636B, 51218B

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IS61Nx(V)P25636B, 51218B	دانلود دیتاشیت

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Manufacturer: ISSI, Integrated Silicon Solution Inc
Series: -
Packaging: Tray
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)
detail: SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 200MHz 3.1ns 100-LQFP (14x20)